US 2,016,284,517 · Filed 2016-01-22
Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium
A technology for forming a uniform film in a plane of a substrate involves a substrate processing apparatus including: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover including a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and including a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure.
Patent details
- Publication number
- US 2,016,284,517
- Filing date
- 2016-01-22
- Grant date
- Application — not yet granted
- Assignee
- Hitachi Kokusai Electric Inc.
- Inventor(s)
- SAIDO SHUHEI
- CPC class
- B42F7/06
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